(China (Mainland))
Product Summary
The 2N6339 is a high-power NPN silicon transistor.
Parametrics
2N6339 absolute maximum ratings: (1)Collector–Base Voltage, VCB: 140Vdc; (2)Collector–Emitter Voltage, VCEO:120Vdc; (3)Emitter–Base Voltage, VEB: 6.0 Vdc; (4)Collector Current, IC: 25Adc Continuous; 50Adc Peak; (5)Base Current, IB: 10 Adc; (6)Total Device Dissipation, PD: 200Watts @ TC = 25℃; 1.14W/℃ when Derate above 25℃; (7)Operating and Storage Junction Temperature Range, TJ, Tstg: –65 to +200℃.
Features
2N6339 features: (1)High Collector–Emitter Sustaining Voltage: VCEO(sus) = 120 Vdc (Min); (2)High DC Current Gain: hFE = 30 – 120 @ IC = 10 Adc; hFE = 12 (Min) @ IC = 25 Adc; (3)Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc; (4)Fast Switching Times @ IC = 10 Adc: tr = 0.3 μs (Max); ts = 1.0 μs (Max); tf = 0.25 μs (Max); (5)Complement to 2N6436–38.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N6339 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
2N6300 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2N6301 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2N6302 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2N6303 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2N6304 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2N6306 |
Other |
|
Data Sheet |
Negotiable |
|
||||
