2N5160

PNP silicon RF power transistor, TO-39, high power gain, 2N5160, Motorola, Inc, -40Vdc

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Price:: US $1.00~1.50 / piece [Get Latest Price]

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PartNumber:: 2N5160

Brand:: Motorola, Inc - Motorola | Pack: TO | D/C: 96+

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Products Upload time: 2011-12-05

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Part Number:2N5160
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Product Summary

The 2N5160 is a PNP silicon RF power transistor. It is designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. The 2N5160 is suitable for use as class A, B, or C output driver, or pre-driver stages in VHF and UHF.

Parametrics

2N5160 absolute maximum ratings: (1)collector-emitter voltage:-40Vdc; (2)collector-base voltage:-60Vdc; (3)emitter-base voltage:-4.0Vdc; (4)collector current:-0.4Adc; (5)total device dissipation:5.0W; (6)operating and storage junction temperature range:-65 to +200℃.

Features

2N5160 features: (1)high power gain: GPE=8.0dB @ f=400MHz, 14.5dB(typ.)@ 175MHz- No emitter tuning; (2)power output-Pout=1.0W @ f=400MHz, Pout=1.5W @ f=175MHz; (3)resists burnout when load is shorted or opened; (4)designed for use in complementary circuits with 2N3866.