(China (Mainland))
Product Summary
The BC637 is a 60V NPN Epitaxial Silicon Transistor. The applications of it are Switching and Amplifier Applications.
Parametrics
BC637 absolute maximum ratings: (1)Emitter-Base Voltage:5 V; (2)Collector Current:1 A; (3)Peak Collector Current:1.5 A; (4)Base Current:100 mA; (5)Collector Power Dissipation:1 W; (6)Junction Temperature:150℃; (7)Storage Temperature:-65 to 150℃; (8)Collector-Emitter Voltage:60V.
Features
BC637 feature: (1)Complement to BC636/638/640.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BC637 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) TO-92 NPN GP AMP |
Data Sheet |
Negotiable |
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|
BC637_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) TO-92 NPN GP AMP |
Data Sheet |
Negotiable |
|
||||
|
BC637_D27Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) TO-92 NPN GP AMP |
Data Sheet |
Negotiable |
|
||||
|
BC637_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
|
||||
|
BC637_J35Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN GEN PURP XTOR |
Data Sheet |
Negotiable |
|
||||
|
BC637_L34Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
|
||||
|
BC637_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) TO-92 NPN GP AMP |
Data Sheet |
Negotiable |
|
||||
|
BC637BU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) TO-92 NPN GP AMP |
Data Sheet |
Negotiable |
|
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