Product Summary

The BC637 is a 60V NPN Epitaxial Silicon Transistor. The applications of it are Switching and Amplifier Applications.

Parametrics

BC637 absolute maximum ratings: (1)Emitter-Base Voltage:5 V; (2)Collector Current:1 A; (3)Peak Collector Current:1.5 A; (4)Base Current:100 mA; (5)Collector Power Dissipation:1 W; (6)Junction Temperature:150℃; (7)Storage Temperature:-65 to 150℃; (8)Collector-Emitter Voltage:60V.

Features

BC637 feature: (1)Complement to BC636/638/640.

Diagrams

BC637 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BC637
BC637

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BC637_D75Z
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BC637-10
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BC637-6
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