Product Summary

THe RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The RA07M1317M output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power of the RA07M1317M becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.

Parametrics

RA07M1317M absolute maximum ratings: (1)VDD, Drain Voltage: 9.2V; (2)VGG, Gate Voltage: 4V; (3)Pin, Input Power: 30mW; (4)Pout, Output Power: 10W; (5)Tcase(OP), Operation Case Temperature Range: -30 to 90℃; (6)Tstg, Storage Temperature Range: -40 to 110℃.

Features

RA07M1317M features: (1)Enhancement-Mode MOSFET Transistors (IDD=0 @ VDD=7.2V, VGG=0V); (2)Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW; (3)ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW; (4)Broadband Frequency Range: 135-175MHz; (5)Low-Power Control Current IGG=1mA (typ) at VGG=3.5V; (6)Module Size: 30 x 10 x 5.4 mm; (7)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.

Diagrams

RA07M1317M block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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RA07M1317M
RA07M1317M
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RA07M1317MSA
RA07M1317MSA
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Data Sheet
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