SST27SF512-70-3C-PGE

Programmable Flash, Low Power Consumption, 20 mA, 5.5V, DIP28

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Price:: US $1.00~1.28 / piece [Get Latest Price]

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PartNumber:: SST27SF512-70-3C-PGE

Brand:: Silicon Storage Technology, Inc - SST | Pack: DIP | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-05-10

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Product Summary

The SST27SF512-70-3C-PGE is a 64K x8 / 128K x8 / 256Kx8 CMOS, Many-Time Programmable (MTP) low costflash, high perfor-mance SuperFlash technology. The split-gate cell designand thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.These MTP devices can be electrically erased and pro-grammed at least 1000 times using an external programmer with a 12V power supply. The SST27SF512-70-3C-PGE has to be erased priorto programming. These devices conform to JEDEC stan-dard pinouts for byte-wide memories.

Parametrics

SST27SF512-70-3C-PGE absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 and VPP Pin to Ground Potential:-0.5V to 14.0V; (6)Package Power Dissipation Capability: 1.0W; (7)Through Hole Lead Soldering Temperature (10 Seconds): 300℃; (8)Surface Mount Solder Reflow Temperature1: 260°C for 10 seconds; (9)Output Short Circuit Current2: 100 mA.

Features

SST27SF512-70-3C-PGE features: (1)Organized as 64K x8 / 128K x8 / 256K x8; (2)4.5-5.5V Read Operation; (3)Superior Reliability; (4)Low Power Consumption; (5)Fast Read Access Time; (6)Fast Byte-Program Operation; (7)Electrical Erase Using ; (8)JEDEC Standard Byte-wide EPROM Pinouts; (9)All non-Pb (lead-free) devices are RoHS compliant.