(China (Mainland))
Product Summary
The BSM25GP120 is an IGBT-Module.
Parametrics
BSM25GP120 absolute maximum ratings: (1)repetitive peak reverse voltage: 1500V; (2)RMS forward current per chip: 40A; (3)DC forward current: 25A; (4)surge forward current: 300A; (5)I2t - value: 450 A2s.
Features
BSM25GP120 features: (1)collector-emitter voltage: 1200V; (2)DC-collector current: 45A; (3)repetitive peak collector current: 50A; (4)total power dissipation: 230W; (5)gate-emitter peak voltage: ±20V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BSM25GP120 |
Infineon Technologies |
IGBT Modules 1200V 25A PIM |
Data Sheet |
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BSM25GP120_B2 |
Infineon Technologies |
IGBT Modules IGBT 1600V 25A |
Data Sheet |
Negotiable |
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