(China (Mainland))
Product Summary
The MBM2732A-35 is a high speed 32768 bit static N-channel MOS erasable and electrically reprogrammable read only memory. The MBM2732A-35 is especially well suited for applications where rapid turn-around and/or bit pattern experimentation are important. The MBM2732A-35 is fabricated using N-chanel double polysilicon gate technology with single transistor stacked gate cells. It is organized as 4.96 words by 8-bits for use in microprocessor applications. Single +5V operation greatly facilitates its use in systems.
Parametrics
MBM2732A-35 absolute maximum ratings: (1)tempeature under bias, TA: -25 to 85℃; (2)storage tempeature, Tstg: -65 to 125℃; (3)inputs/outputs with respect to VSS, VIN, VOUT: -0.6 to 0.7V; (4)output enable/program input with respect to VSS, OE/VPP: -0.6 to 26V; (5)VCC with respect to VSS, VCC: -0.6 to 7V.
Features
MBM2732A-35 features: (1)organized as 4096 words by 8-bits, fully decoded; (2)simple rogramming requirements; (3)single location programming; (4)programs with one 50ms pulse; (5)programming voltage: 20Volts; (6)low poer requirement; (7)single +5V operation; (8)TTL compatible inputs and outputs; (9)no clocks required, fully static operation; (10)three-state output with OR-tie capability; (11)output enable pin for simplified memory expansion; (12)fast access time: 350ns max; (13)standard 24-pin DIP package; (14)pin compatible wit intel 2732A.
Diagrams
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