(China (Mainland))
Product Summary
The MG200Q2YS50 is a silicon N channel IGBT. It is suitable for High Power Switching Applications and Motor Control Applications.
Parametrics
MG200Q2YS50 features: (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC, IC (25℃/80℃): 300/200A; 1ms, IC (25℃/80℃): 600/400A; (4)Forward current, DC, IF: 200A; 1ms, IFM: 400A; (5)Collector power dissipation (Tc = 25℃), PC: 1400W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500V (AC 1 min.); (9)Screw torque (Terminal / mounting): 3/3 Nm.
Features
MG200Q2YS50 features: (1)High input impedance; (2)High speed: tf = 0.3μs (Max.) @Inductive Load; (3)Low saturation voltage: VCE (sat) = 3.6V (Max.); (4)Enhancement-mode; (5)Includes a complate half bridge in one ackage; (6)The electrodes are isolated from case.
Diagrams
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MG2001 |
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MG2002 |
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MG2004 |
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MG200J6ES60 |
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MG200J6ES61 |
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IGBT MOD CMPCT 600V 200A |
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