Product Summary

The MG200Q2YS50 is a silicon N channel IGBT. It is suitable for High Power Switching Applications and Motor Control Applications.

Parametrics

MG200Q2YS50 features: (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC, IC (25℃/80℃): 300/200A; 1ms, IC (25℃/80℃): 600/400A; (4)Forward current, DC, IF: 200A; 1ms, IFM: 400A; (5)Collector power dissipation (Tc = 25℃), PC: 1400W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500V (AC 1 min.); (9)Screw torque (Terminal / mounting): 3/3 Nm.

Features

MG200Q2YS50 features: (1)High input impedance; (2)High speed: tf = 0.3μs (Max.) @Inductive Load; (3)Low saturation voltage: VCE (sat) = 3.6V (Max.); (4)Enhancement-mode; (5)Includes a complate half bridge in one ackage; (6)The electrodes are isolated from case.

Diagrams

MG200Q2YS50 equivalent circuit

MG2000
MG2000

Other


Data Sheet

Negotiable 
MG2001
MG2001

Other


Data Sheet

Negotiable 
MG2002
MG2002

Other


Data Sheet

Negotiable 
MG2004
MG2004

Other


Data Sheet

Negotiable 
MG200J6ES60
MG200J6ES60

Other


Data Sheet

Negotiable 
MG200J6ES61
MG200J6ES61


IGBT MOD CMPCT 600V 200A

Data Sheet

0-1: $147.34