Product Summary

The MRF150 is a RF power field-effect transistor. It is designed primarily for linear large-signal output stages up to 150 MHz frequency range.

Parametrics

MRF150 absolute maximum ratings: (1)Drain–Source Voltage:125 Vdc; (2)Drain–Gate Voltage:125 Vdc; (3)Gate–Source Voltage:±40 Vdc; (4)Drain Current:Continuous:16 Adc; (5)Total Device Dissipation:@ TC = 25℃:300W, Derate above 25℃:1.71W/℃; (6)Storage Temperature Range:–65℃ to +150℃; (7)Operating Junction Temperature:200℃.

Features

MRF150 features: (1)Specified 50 Volts, 30 MHz Characteristics: Output Power = 150 Watts, Power Gain = 17 dB (Typ), Efficiency = 45% (Typ); (2)Superior High Order IMD; (3)IMD(d3) (150 W PEP):–32 dB (Typ); (4)IMD(d11) (150 W PEP):–60 dB (Typ); (5)100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR.

Diagrams

MRF150 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF150
MRF150
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB
Data Sheet
0-1: $39.75
1-10: $35.78
10-25: $25.44
25-50: $24.65
MRF1500
MRF1500
Other

Data Sheet
Negotiable 
MRF15030
MRF15030
Other

Data Sheet
Negotiable 
MRF15060
MRF15060
Other

Data Sheet
Negotiable 
MRF15060S
MRF15060S
Other

Data Sheet
Negotiable 
MRF1507
MRF1507
Other

Data Sheet
Negotiable 
MRF1507T1
MRF1507T1
Other

Data Sheet
Negotiable 
MRF15090
MRF15090
Other

Data Sheet
Negotiable