(China (Mainland))
Product Summary
The MG25Q6ES42 is a 4.0V silicon N channel IGBT. The applications of it are high power switching applications, motor control applications.
Parametrics
MG25Q6ES42 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current: IC:25A, ICP:50A; (4)forward current: IF:25A, IFM:50A; (5)collector power dissipation:200W; (6)junction temperature:150℃; (7)storage temperature range:-40 to 125℃; (8)isolation voltage:2500V(AC 1 minute); (9)screw torque:3N.m.
Features
MG25Q6ES42 features: (1)the electrodes are isolated from case; (2)6 IGBTs are built into 1 package; (3)enhancement-mode; (4)low saturation voltage: VCE(sat)=4.0V(max.); (5)high speed: tf=0.5us(max.), trr=0.5us(max.).
Diagrams
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