(China (Mainland))
Product Summary
The IRF1324S-7P is specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parametrics
IRF1324S-7P absolute maixmum ratings: (1)IDM Pulsed Drain Current: 1640A; (2)Maximum Power Dissipation: 300W; (3)Linear Derating Factor: 2.0W/℃; (4)VGS, Gate-to-Source Voltage: ± 20V; (5)EAS (Thermally limited) Single Pulse Avalanche Energy: 230mJ; (6)dv/dt Peak Diode Recovery: 1.6V/ns; (7)TJ Operating Junction and Storage Temperature Range: -55 to + 175℃.
Features
IRF1324S-7P features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Lead-Free, RoHS Compliant; (7)Automotive Qualified.
Diagrams
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 IRF1324S-7PPBF |
International Rectifier |
MOSFET MOSFT 24V 340A 1.65mOhm 160nC Qg |
Data Sheet |
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IRF1 100 5% |
Vishay/Dale |
Power Inductors 100uH 5% |
Data Sheet |
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IRF1 560 10% |
Vishay/Dale |
Power Inductors 560uH 10% |
Data Sheet |
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IRF1010E |
International Rectifier |
MOSFET N-CH 60V 84A TO-220AB |
Data Sheet |
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IRF1010EL |
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MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
Negotiable |
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IRF1010ELPBF |
International Rectifier |
MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
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IRF1010EPBF |
International Rectifier |
MOSFET MOSFT 60V 81A 12mOhm 86.6nC |
Data Sheet |
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