Product Summary

The BUP313 is a High switching speed transistor.

Parametrics

BUP313 absolute maximum ratings: (1)Collector-emitter voltage: 1200v; (2)Collector-gate voltage: 1200v; (3)Gate-emitter voltage: ± 20v; (4)DC collector current: 32A/20A; (5)Power dissipation: 200W; (6)Chip or operating temperature: -55 to 150℃; (7)Storage temperature: -55 to 150℃.

Features

BUP313 features: (1)Low forward voltage drop; (2)High switching speed; (3)Low tail current; (4)Latch-up free; (5)Avalanche rated.

Diagrams

BUP313 Package Outlines

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BUP313D
BUP313D

Infineon Technologies

IGBT Transistors LOW LOSS DuoPack 1200V 15A

Data Sheet

Negotiable 
BUP313
BUP313

Infineon Technologies

IGBT Transistors LOW LOSS IGBT 1200V 15A

Data Sheet

Negotiable