(China (Mainland))
Product Summary
The 2SJ116 is a P-channel MOSFET.
Parametrics
2SJ116 absolute maximum ratings: (1)drain-source voltage: -400V; (2)gate-source voltage: ±20V; (3)drain current: -8A; (4)drain peak current: -15A; (5)channel dissipation: 125W; (6)channel temperature: 150℃; (7)storage temperature: -55 to 150℃.
Features
2SJ116 features: (1)low on-risistance; (2)high speed switching; (3)high cutoff frequency; (4)no secondary breakdown; (5)suitable for switching regulator.
Diagrams
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 2SJ103 |
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2SJ104 |
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Negotiable |
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2SJ105 |
Other |
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Negotiable |
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2SJ106 |
Other |
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Negotiable |
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2SJ107 |
Other |
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Negotiable |
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2SJ108 |
Other |
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Data Sheet |
Negotiable |
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