(China (Mainland))
Product Summary
The BSM15GD120DN2 is a 3-phase full-bridge IGBT Power Module.
Parametrics
BSM15GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage: 1200V; (3)Gate-emitter voltage: ± 20V; (4)Power dissipation per IGBT: 145W; (5)Chip temperature: 150℃; (6)Storage temperature: -40 to 125℃.
Features
BSM15GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM15GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 15A 3-PHASE |
Data Sheet |
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BSM15GD120DN2E3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 25A |
Data Sheet |
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