(China (Mainland))
Product Summary
The SGD02N120 is a Fast S-IGBT in NPT-technology.
Parametrics
SGD02N120 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)DC collector current, IC: 6.2A when TC = 25℃; 2.8A when TC = 100℃; (3)Pulsed collector current, tp limited by Tjmax, ICpuls: 9.6A; (4)Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150℃: 9.6A; (5)Gate-emitter voltage, VGE: ±20 V; (6)Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25?, start at Tj = 25℃, EAS: 10 mJ; (7)Short circuit withstand time VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj; (8) ≤ 150℃, tSC: 10 μs; (9)Power dissipation TC = 25℃, Ptot: 62 W; (10)Operating junction and storage temperature, Tj , Tstg :-55 to +150℃; (11)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.
Features
SGD02N120 features: (1)40% lower Eoff compared to previous generation; (2)Short circuit withstand time – 10 μs; (3)Designed for: Motor controls, Inverter, SMPS; (4)NPT-Technology; (5)very tight parameter distribution; (6)high ruggedness, temperature stable behaviour; (7)parallel switching capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SGD02N120 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 1200V 2A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SGD02N120 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 1200V 2A |
Data Sheet |
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SGD04N60 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 4A |
Data Sheet |
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SGD06N60 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 6A |
Data Sheet |
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SGD02N60 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 2A |
Data Sheet |
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