(China (Mainland))
Product Summary
The BUP313 is a High switching speed transistor.
Parametrics
BUP313 absolute maximum ratings: (1)Collector-emitter voltage: 1200v; (2)Collector-gate voltage: 1200v; (3)Gate-emitter voltage: ± 20v; (4)DC collector current: 32A/20A; (5)Power dissipation: 200W; (6)Chip or operating temperature: -55 to 150℃; (7)Storage temperature: -55 to 150℃.
Features
BUP313 features: (1)Low forward voltage drop; (2)High switching speed; (3)Low tail current; (4)Latch-up free; (5)Avalanche rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BUP313 |
Infineon Technologies |
IGBT Transistors LOW LOSS IGBT 1200V 15A |
Data Sheet |
Negotiable |
|
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|
BUP313D |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 15A |
Data Sheet |
Negotiable |
|
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