(China (Mainland))
Product Summary
The R3370ZD12C is a Distributed Gate Thyristor.
Parametrics
R3370ZD12C absolute maximum ratings: (1)Repetitive peak off-state voltage:1000 to 1200V; (2)Non-repetitive peak off-state voltage:1000 to 1200V; (3)Repetitive peak reverse voltage:1000 to 1200V; (4)Non-repetitive peak reverse voltage:1100 to 1300V; (5)Maximum mean on-state current, Tsink=55℃:3370A; (6)Maximum mean on-state current. Tsink=85℃:2145A; (7)Maximum mean on-state current. Tsink=85℃:1179A; (8)Nominal RMS on-state current, Tsink=25℃:6850A; (9)D.C. on-state current, Tsink=25℃:5360A; (10)Maximum rate of rise of on-state current (repetitive):1000 A/μs; (11)Maximum rate of rise of on-state current (non-repetitive):1500 A/μs; (12)Peak reverse gate voltage:5V; (13)Mean forward gate power:5W; (14)Peak forward gate power:50W; (15)Operating temperature range:-40 to +125℃; (16)Storage temperature range:-40 to +150℃.
Features
R3370ZD12C features: (1)Maximum peak on-state voltage:1.54V; (2)Maximum peak on-state voltage:1.95V; (3)Threshold voltage:1.353V; (4)Slope resistance:0.064mΩ; (5)Critical rate of rise of off-state voltage:200V/us; (6)Peak off-state current:300mA; (7)Peak reverse current:300mA; (8)Gate trigger voltage:3.0V; (9)Gate trigger current:300mA; (10)Non-trigger gate voltage:0.25V; (11)Holding current:1000mA.
Diagrams
