(China (Mainland))
Product Summary
The TMS28F200AZ is a 262144 by 8-bit /131072 by-16 bit (2097152-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F200AZ can be ordered in five different voltage configurations. Operation as a 256K-byte (8-bit) or a 128K-word (16-bit) organization is user-definable. WSM status can be monitored by an on-chip status register to determine the progress of program/erase tasks. The TMS28F200AZ features user-selectable block-erasure.
Parametrics
TMS28F200AZ absolute maximum ratings: (1)Supply voltage range:-0.6 V to 7 V; (2)Supply voltage range:-0.6 V to 14 V; (3)Input voltage range: All inputs except A9, RP:-0.6 V to VCC + 1V, RP, A9:-0.6 V to 13.5 V; (4)Output voltage range:-0.6 V to VCC + 1 V; (5)Operating free-air temperature range:0℃ to 70℃; (6)Storage temperature range:-65℃ to 150℃.
Features
TMS28F200AZ features: (1)Fully Automated On-Chip Erase and Word/Byte Program Operations; (2)Write-Protection for Boot Block; (3)Industry Standard Command-State Machine(CSM): Erase Suspend/Resume, Algorithm-Selection Identifier; (4)Five Different Combinations of Supply Voltages Offered; (5)All Inputs/Outputs TTL-Compatible; (6)Low Power Dissipation (VCC = 5.5 V); (7)100000- and 10000-Program/Erase-Cycle Versions; (8)One 16K-Byte Protected Boot Block; (9)Two 8K-Byte Parameter Blocks; (10)One 96K-Byte Main Block; (11)One 128K-Byte Main Block; (12)Top or Bottom Boot Locations.
Diagrams
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