Product Summary
The BSM200GA120DN2 is an IGBT Power Module.
Parametrics
BSM200GA120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage: 1200V; (3)Power dissipation per IGBT: 1550W; (4)Chip temperature: 150℃; (5)Storage temperature: -40 to 125℃.
Features
BSM200GA120DN2 features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
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![]() BSM200GA120DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 200A SINGLE |
![]() Data Sheet |
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![]() BSM200GA120DN2C |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 200A |
![]() Data Sheet |
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![]() BSM200GA120DN2F |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 200A |
![]() Data Sheet |
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![]() BSM200GA120DN2FS |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 200A |
![]() Data Sheet |
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![]() BSM200GA120DN2FS_E3256 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 200A |
![]() Data Sheet |
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![]() BSM200GA120DN2S |
![]() Infineon Technologies |
![]() IGBT Transistors 1200V 200A SINGLE |
![]() Data Sheet |
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![]() BSM200GA120DN2S_E3256 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 200A |
![]() Data Sheet |
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